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APT28GA60K
600V High Speed PT IGBT
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
(R)
TO-220
APT28GA60K
Single die IGBT
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" frome Case for 10 Seconds
1
Ratings
600 50 28 84 30 223 84A @ 600V -55 to 150 300
Unit
V
A
V W
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 16A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
600
Typ
2.0 1.9 4.5
Max
2.5 6 250 2500 100
Unit
V
VGE =VCE , IC = 1mA
A nA
052-6330 Rev B 12 - 2008
VGS = 30V
Thermal and Mechanical Characteristics
Symbol
RJC WT Torque
Characteristic
Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-220 Package), 4-40 or M3 screw
Min
-
Typ
1.9
Max
0.56 10
Unit
C/W g in*lbf
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 16A TJ = 150C, RG = 104, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 16A RG = 104 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 16A RG = 104 TJ = +125C 84 11 8 101 27 239 170 11 10 132 114 412 335
APT28GA60K
Typ
2109 214 26 90 14 28 nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Min
Max
Unit
A
ns
J
ns
J
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6330 Rev B 12 - 2008
Typical Performance Curves
250
V
GE
APT28GA60K
250 TJ= 150C IC, COLLECTOR CURRENT (A) 200 TJ= 125C 15V 13V 12V 11V 10V 9V 50 8V 6V
= 15V
IC, COLLECTOR CURRENT (A)
200
TJ= 55C TJ= 25C
150
150
100
100
50
0
0 5 10 15 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0
0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 16A C T = 25C
J
280 240 200 160 120 80
15 VCE = 120V 10 VCE = 300V
IC, COLLECTOR CURRENT (A)
5
VCE = 480V
TJ= 25C 40 TJ= 125C 0 0
TJ= -55C
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
4 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
2
0
0
20
40 60 80 GATE CHARGE (nC) FIGURE 4, Gate charge
100
5
3
4
IC = 400A IC = 200A
3
IC = 32A IC = 16A
2 IC = 100A 1
2
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 8A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10
0
6
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 60 50 40 30 20 10 0 052-6330 Rev B 12 - 2008
0
0
25
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A)
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
25
Typical Performance Curves
16 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 15 14 13 12 11 10 9 0 5 10 15 20 25 30 35 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 35 30 25 tr, RISE TIME (ns) 20 15 10 5 0
TJ = 25 or 125C,VGE = 15V RG = 10, L = 100H, VCE = 400V VCE = 400V TJ = 25C, or 125C RG = 10 L = 100H
APT28GA60K
200
160
120
VGE =15V,TJ=125C
VGE = 15V
80
VGE =15V,TJ=25C
40
VCE = 400V RG = 10 L = 100H
8
0 5 10 15 20 25 30 35 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 150 125 100 75 50 25 0
RG = 10, L = 100H, VCE = 400V
0
TJ = 125C, VGE = 15V
tr, FALL TIME (ns)
TJ = 25C, VGE = 15V
0
5
10
15
20
25
30
35
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 1000 Eon2, TURN ON ENERGY LOSS (J) 900 800 700 600 500 400 300 200 100 0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 1500 SWITCHING ENERGY LOSSES (J) 1250 1000
Eoff,32A
V = 400V CE V = +15V GE T = 125C
J
EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R =10
G
0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1000 900 800 700 600 500 400 300 200 100 0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 1000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 10
G
V = 400V CE V = +15V GE R = 10
G
TJ = 125C
TJ = 125C
TJ = 25C
TJ = 25C
0
0
Eon2,32A
Eon2,32A
800
Eoff,32A
600
Eon2,16A
750 500 250
Eoff,8A Eon2,16A Eoff,16A Eon2,8A
052-6330 Rev B 12 - 2008
400
Eoff,16A
200
Eon2,8A Eoff,8A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
Typical Performance Curves
10000 Cies C, CAPACITANCE (pF) 1000 200 100 IC, COLLECTOR CURRENT (A)
APT28GA60K
10
100
Coes
1
0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
10
Cres
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.6 ZJC, THERMAL IMPEDANCE (C/W) 0.5 0.4 0.3 0.2 0.1 0 10-5 10
-4
D = 0.9
0.7
0.5
Note:
0.3
PDM
t1 t2
0.1 0.05 SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10 -3 10 -2 10 -1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
052-6330 Rev B 12 - 2008
APT28GA60K
10% Gate Voltage td(on)
90% TJ = 125C Collector Current tr
APT30DQ120
V CC
IC
V CE
5%
10%
5% Collector Voltage
Switching Energy
A D.U.T.
Figure 12, Inductive Switching Test Circuit
Figure 13, Turn-on Switching Waveforms and Definitions
90% 90% td(off) TJ = 125C Gate Voltage Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 14, Turn-off Switching Waveforms and Definitions
TO-220 (K) Package Outline
2.80 (.110) 2.60 (.102) 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 7.10 (.280) 6.70 (.263)
12.192 (.480) 9.912 (.390)
3.70 (.145) 2.20 (.126)
3.40 (.133) Dia. 3.10 (.123)
3.683 (.145) MAX.
0.48 (.019) 0.44 (.017) 2.85 (.112) 2.65 (.104)
052-6330 Rev B 12 - 2008
14.73 (.580) 12.70 (.500)
Gate Drain Collector Emitter Source
1.01 (.040) 3-Plcs. .83 (.033) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190)
1.77 (.070) 3-Plcs. 1.15 (.045)
4.80 (.189) 4.60 (.181)
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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